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H11F1M, H11F2M, H11F3M Photo FET Optocouplers
May 2007
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Features
As a remote variable resistor: 100 to 300M 99.9% linearity 15pF shunt capacitance 100G I/O isolation resistance As an analog switch: Extremely low offset voltage 60 Vpk-pk signal capability No charge injection or latch-up ton, toff 15S UL recognized (File #E90700)
tm
General Description
The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
Applications
As a remote variable resistor: Isolated variable attenuator Automatic gain control Active filter fine tuning/band switching As an analog switch:
Isolated sample and hold circuit Multiplexed, optically isolated A/D conversion
Packages
Schematic
ANODE 1 6 OUTPUT TERM.
CATHODE 2
5
3
4
OUTPUT TERM.
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Absolute Maximum Ratings (TA = 25C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL EMITTER IF VR IF(pk) PD DETECTOR PD BV4-6 Detector Power Dissipation @ 25C Derate linearly from 25C Breakdown Voltage (either polarity) H11F1M, H11F2M H11F3M I4-6 Continuous Detector Current (either polarity) All All 300 4.0 30 15 100 mW mW/C V V mA Continuous Forward Current Reverse Voltage Forward Current - Peak (10 s pulse, 1% duty cycle) LED Power Dissipation 25C Ambient Derate Linearly from 25C All All All All 60 5 1 100 1.33 mA V A mW mW/C Storage Temperature Operating Temperature Lead Solder Temperature All All All -55 to +150 -40 to +100 260 for 10 sec C C C
Parameter
Device
Value
Units
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 2
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Electrical Characteristics (TA = 25C unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF IR CJ BV4-6 I4-6 Input Forward Voltage Reverse Leakage Current Capacitance Breakdown Voltage Either Polarity Off-State Dark Current IF = 16mA VR = 5V V = 0 V, f = 1.0 MHz I4-6 = 10A, IF = 0 V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, TA = 100C R4-6 C4-6 Off-State Resistance Capacitance V4-6 = 15 V, IF = 0 V4-6 = 15 V, IF = 0, f = 1MHz All All All H11F1M, H11F2M H11F3M All All All All 300 15 30 15 50 50 nA A M pF 50 1.3 1.75 10 V A pF V
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
OUTPUT DETECTOR
Transfer Characteristics Symbol
R4-6
Characteristics
On-State Resistance
Test Conditions
IF = 16mA, I4-6 = 100A
Device
H11F1M H11F2M H11F3M H11F1M H11F2M H11F3M All
Min
Typ*
Max
200 330 470 200 330 470 0.1
Units
DC CHARACTERISTICS
R6-4
On-State Resistance
IF = 16mA, I6-4 = 100A
Resistance, non-linearity and assymetry AC CHARACTERISTICS ton toff Turn-On Time Turn-Off Time
IF = 16mA, I4-6 = 25A RMS, f = 1kHz RL = 50, IF = 16mA, V4-6 = 5V RL = 50, IF = 16mA, V4-6 = 5V
%
All All
25 25
S S
Isolation Characteristics Symbol
VISO RISO CISO
Characteristic
Isolation Voltage Isolation Resistance Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec. VI-O = 500 VDC f = 1MHz
Device
All All All
Min.
7500 1011
Typ.*
Max.
Units
VACPEAK
0.2
pF
*All Typical values at TA = 25C
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 3
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Typical Performance Curves
Figure 1. Resistance vs. Input Current
800 600 I46 - OUTPUT CURRENT (A) r(on) - Normalized Resistance 10 400 200 0 -200 -400 -600 -800 1 0 100 -0.2 -0.1 0.0 0.1 0.2 IF = 2mA IF = 6mA IF = 10mA IF = 14mA IF = 18mA
Figure 2. Output Characteristics
IF = 18mA IF = 14mA IF = 10mA IF = 6mA IF = 2mA
1
0.1 1
Normalized to: IF = 16 mA I46 = 5 A RMS
IF - INPUT CURRENT - mA
V46 - OUTPUT VOLTAGE (V)
Figure 3. LED Forward Voltage vs. Forward Current
2.0
Figure 4. Off-state Current vs. Ambient Temperature
10000 NORMALIZED TO: V46 = 15V IF = 0mA TA = 25C
1.8 I46 - NORMALIZED DARK CURRENT VF - FORWARD VOLTAGE (V) 1000
1.6
1.4
TA = -55C TA = 25C
100
1.2
10
1.0
TA = 100C
0.8 0.1 1 10 100 IF - LED FORWARD CURRENT - mA
1 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C)
Figure 5. Resistance vs. Temperature
3 V4-6 - MAXIMUM RMS SIGNAL VOLTAGE - mV
NORMALIZED TO IF = 16mA I4-6 = 25A RMS TA = 25C
Figure 6. Region of Linear Resistance
100 80 60 40 I4-6 - MAXIMUM RMS SIGNAL CURRENT - A
MAXIMUM RMS VOLTAGE
100 80 60 40
r(on) - NORMALIZED RESISTANCE
2
Observed Range
n dia Me ice v De
20
20
1K
1 0.8 0.6
10 8 6 4
MAXIMUM RMS CURRENT
10 8 6 4
2
2
0.4 -50
-25 0 25 50 75 TA - AMBIENT TEMPERATURE - C
100
1 100
1000
10K
100K
r(on) RESISTANCE -
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 4
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Figure 7. Resistive non-linearity vs. D.C. Bias
5
r(on) - CHANGE IN RESISTANCE - %
4
3
2 I4-6 = 10A RMS r(on) = 200 1
0 1 50 100 150 200 250 300 350 V4-6 - D.C. BIAS VOLTAGE - mA
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 5
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Typical Applications
As a Variable Resistor
ISOLATED VARIABLE ATTENUATORS
500K
As an Analog Signal Switch
ISOLATED SAMPLE AND HOLD CIRCUIT
+
VIN
VIN
H11F1M
VOUT
VIN
H11F1M
50
VOUT
VIN
H11F1M
VOUT C
IF VOUT
IF LOW FREQUENCY @10KHz DYNAMIC RANGE 70db FOR 0 IF 30mA
IF
t
IF
HIGH FREQUENCY @1MHz DYNAMIC RANGE 50db FOR 0 IF 30mA
Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. AUTOMATIC GAIN CONTROL
Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude. .
MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION
CALL V1 H11F1M CALL Vn
VIN
VOUT
+
V1 V2 A/D CONVERTER
H74A1 MSB MSB DATA INPUT LSB H11F1M
DATA ACQUISITION
Vn
H11F1M
LSB H74A1
500K
PROCESS CONTROL LOGIC SYSTEM
IF AGC SIGNAL
This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. ACTIVE FILTER FINE TUNING/BAND SWITCHING
IF1 IF2 H11F1M H11F1M
The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. TEST EQUIPMENT - KELVIN CONTACT POLARITY
H11F1M IF A IF C IF TO A & B FOR POLARITY 1 C & D FOR POLARITY 2 H11F1M
A1
A2
ITEST
A3
DEVICE UNDER TEST
PARAMETER SENSING BOARD
B IF H11F1M
IF1 ADJUSTS f1, IF2 ADJUSTS f2
D IF
H11F1M
The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED's controlling the filter's transfer characteristic.
In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11FXM eliminates these troubles while providing faster switching.
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 6
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Package Dimensions
Through Hole
0.350 (8.89) 0.320 (8.13)
Surface Mount
0.350 (8.89) 0.320 (8.13)
0.260 (6.60) 0.240 (6.10)
0.260 (6.60) 0.240 (6.10)
0.390 (9.90) 0.332 (8.43)
0.070 (1.77) 0.040 (1.02)
0.070 (1.77) 0.040 (1.02)
0.014 (0.36) 0.010 (0.25) 0.320 (8.13)
0.320 (8.13) 0.014 (0.36) 0.010 (0.25)
0.200 (5.08) 0.115 (2.93)
0.200 (5.08) 0.115 (2.93)
0.012 (0.30) 0.008 (0.20)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30)
0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41)
0.100 [2.54] 0.035 (0.88) 0.006 (0.16)
0.4" Lead Spacing
Recommended Pad Layout for Surface Mount Leadform
0.070 (1.78)
0.350 (8.89) 0.320 (8.13)
0.260 (6.60) 0.240 (6.10)
0.060 (1.52)
0.425 (10.79)
0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25)
0.100 (2.54) 0.305 (7.75) 0.030 (0.76)
0.200 (5.08) 0.115 (2.93)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16)
Note: All dimensions are in inches (millimeters).
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 7
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Ordering Information
Option
No option S SR2 T V TV SV SR2V
Order Entry Identifier (Example)
H11F1M H11F1SM H11F1SR2M H11F1TM H11F1VM H11F1TVM H11F1SVM H11F1SR2VM
Description
Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
H11F1M V
3 4
2 6
X YY Q
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 8
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
Carrier Tape Specifications
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10
11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3
0.1 MAX
10.1 0.20
O1.5 0.1/-0
User Direction of Feed
Reflow Profile
300 280 260 240 220 200 180 160 C 140 120 100 80 60 40 20 0 0 260C >245C = 42 Sec
Time above 183C = 90 Sec 1.822C/Sec Ramp up rate
33 Sec 60 120 180 270 360
Time (s)
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 9
H11F1M, H11F2M, H11F3M Photo FET Optocouplers
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroPakTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I28
2.
A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0
www.fairchildsemi.com 10

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